Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode

Colón, Albert; Douglas, Erica A.; Pope, Andrew J.; Klein, Brianna A.; Stephenson, Chad A.; Van Heukelom, Michael S.; Tauke-Pedretti, Anna; Baca, Albert G.

doi:10.1016/j.sse.2018.10.009

Title: Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm² specific on-resistance AlGaN/GaN Schottky barrier diode

Abstract

Here, Al_0.26Ga_0.74N/GaN on SiC lateral Schottky diodes were fabricated with variable anode-to-cathode spacing and were analyzed for blocking and on-state device performance. On-chip normally-on High Electron Mobility Transistor (HEMT) structures were also fabricated for a comparison of blocking characteristics. The Schottky diode displayed an ideality factor of 1.59 with a Ni/AlGaN zero bias barrier height of 1.18 eV and a flat band barrier height of 1.59 eV. For anode-to-cathode spacings between 10 and 100 μm, an increase in median breakdown voltages from 529 V to 8519 V and median specific on-resistance (R_on-sp) from 1.5 to 60.7 mΩ cm² was observed with an increase in spacing. The highest performing diode had a lateral figure of merit of 1.37 GW/cm² corresponding to a breakdown voltage upwards of 9 kV and a R_on-sp of 59 mΩ cm². This corresponds to the highest Schottky diode breakdown voltage reported thus far with an Al_0.26Ga_0.74N/GaN lateral structure.

Authors:

Colón, Albert ^[1]; Douglas, Erica A. ^[1]; Pope, Andrew J. ^[1]; Klein, Brianna A. ^[1]; Stephenson, Chad A. ^[1]; Van Heukelom, Michael S. ^[1]; Tauke-Pedretti, Anna ^[1]; Baca, Albert G. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Fri Oct 26 00:00:00 EDT 2018

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1485455

Alternate Identifier(s):: OSTI ID: 1761218

Report Number(s):: SAND-2018-11934J
Journal ID: ISSN 0038-1101; 668767

Grant/Contract Number:: AC04-94AL85000; NA0003525

Resource Type:: Accepted Manuscript

Journal Name:: Solid-State Electronics

Additional Journal Information:: Journal Volume: 151; Journal Issue: C; Journal ID: ISSN 0038-1101

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Colón, Albert, Douglas, Erica A., Pope, Andrew J., Klein, Brianna A., Stephenson, Chad A., Van Heukelom, Michael S., Tauke-Pedretti, Anna, and Baca, Albert G. Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode.  United States: N. p., 2018. 
Web.  doi:10.1016/j.sse.2018.10.009.

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                    Colón, Albert, Douglas, Erica A., Pope, Andrew J., Klein, Brianna A., Stephenson, Chad A., Van Heukelom, Michael S., Tauke-Pedretti, Anna, & Baca, Albert G. Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode.  United States.  https://doi.org/10.1016/j.sse.2018.10.009

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                    Colón, Albert, Douglas, Erica A., Pope, Andrew J., Klein, Brianna A., Stephenson, Chad A., Van Heukelom, Michael S., Tauke-Pedretti, Anna, and Baca, Albert G. Fri .  
"Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode".  United States.  https://doi.org/10.1016/j.sse.2018.10.009.  https://www.osti.gov/servlets/purl/1485455.

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@article{osti_1485455,

  title        = {Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode},

  author       = {Colón, Albert and Douglas, Erica A. and Pope, Andrew J. and Klein, Brianna A. and Stephenson, Chad A. and Van Heukelom, Michael S. and Tauke-Pedretti, Anna and Baca, Albert G.},

  abstractNote = {Here, Al0.26Ga0.74N/GaN on SiC lateral Schottky diodes were fabricated with variable anode-to-cathode spacing and were analyzed for blocking and on-state device performance. On-chip normally-on High Electron Mobility Transistor (HEMT) structures were also fabricated for a comparison of blocking characteristics. The Schottky diode displayed an ideality factor of 1.59 with a Ni/AlGaN zero bias barrier height of 1.18 eV and a flat band barrier height of 1.59 eV. For anode-to-cathode spacings between 10 and 100 μm, an increase in median breakdown voltages from 529 V to 8519 V and median specific on-resistance (Ron-sp) from 1.5 to 60.7 mΩ cm2 was observed with an increase in spacing. The highest performing diode had a lateral figure of merit of 1.37 GW/cm2 corresponding to a breakdown voltage upwards of 9 kV and a Ron-sp of 59 mΩ cm2. This corresponds to the highest Schottky diode breakdown voltage reported thus far with an Al0.26Ga0.74N/GaN lateral structure.},

  doi          = {10.1016/j.sse.2018.10.009},

  journal      = {Solid-State Electronics},

  number       = C,

  volume       = 151,

  place        = {United States},

  year         = {Fri Oct 26 00:00:00 EDT 2018},

  month        = {Fri Oct 26 00:00:00 EDT 2018}

}

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https://doi.org/10.1016/j.sse.2018.10.009

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Cited by: 9 works

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Table 1: Recent reports on GaN based diodes.

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Title: Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode

Abstract

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Title: Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm² specific on-resistance AlGaN/GaN Schottky barrier diode