Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]
Abstract
Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (–201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Colorado School of Mines, Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1339246
- Report Number(s):
- NREL/JA-5K00-67538
Journal ID: ISSN 2159-6859
- Grant/Contract Number:
- AC36-08GO28308; AC36-99GO10337
- Resource Type:
- Accepted Manuscript
- Journal Name:
- MRS Communications
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 4; Journal ID: ISSN 2159-6859
- Publisher:
- Materials Research Society - Cambridge University Press
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; thin films; gallium oxide; optoelectronics; phase transformation; dopants
Citation Formats
Garten, Lauren M., Zakutayev, Andriy, Perkins, John D., Gorman, Brian P., Ndione, Paul F., and Ginley, David S. Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]. United States: N. p., 2016.
Web. doi:10.1557/mrc.2016.50.
Garten, Lauren M., Zakutayev, Andriy, Perkins, John D., Gorman, Brian P., Ndione, Paul F., & Ginley, David S. Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]. United States. https://doi.org/10.1557/mrc.2016.50
Garten, Lauren M., Zakutayev, Andriy, Perkins, John D., Gorman, Brian P., Ndione, Paul F., and Ginley, David S. Mon .
"Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]". United States. https://doi.org/10.1557/mrc.2016.50. https://www.osti.gov/servlets/purl/1339246.
@article{osti_1339246,
title = {Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]},
author = {Garten, Lauren M. and Zakutayev, Andriy and Perkins, John D. and Gorman, Brian P. and Ndione, Paul F. and Ginley, David S.},
abstractNote = {Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (–201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.},
doi = {10.1557/mrc.2016.50},
journal = {MRS Communications},
number = 4,
volume = 6,
place = {United States},
year = {Mon Nov 21 00:00:00 EST 2016},
month = {Mon Nov 21 00:00:00 EST 2016}
}
Web of Science
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Works referencing / citing this record:
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