Transient GaAs plasmonic metasurfaces at terahertz frequencies
Abstract
Here we demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. In conclusion, the platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.
- Authors:
-
[1];
[1];
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Indian Institute of Science Education and Research, Mohanpur (India)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1338393
- Report Number(s):
- SAND-2016-12650J
Journal ID: ISSN 2330-4022; 649940
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Photonics
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2330-4022
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; metasurface; perfect absorber; semiconductor; ultrafast plasmonics
Citation Formats
Yang, Yuanmu, Kamaraju, N., Campione, Salvatore, Liu, Sheng, Reno, John L., Sinclair, Michael B., Prasankumar, Rohit P., and Brener, Igal. Transient GaAs plasmonic metasurfaces at terahertz frequencies. United States: N. p., 2016.
Web. doi:10.1021/acsphotonics.6b00735.
Yang, Yuanmu, Kamaraju, N., Campione, Salvatore, Liu, Sheng, Reno, John L., Sinclair, Michael B., Prasankumar, Rohit P., & Brener, Igal. Transient GaAs plasmonic metasurfaces at terahertz frequencies. United States. https://doi.org/10.1021/acsphotonics.6b00735
Yang, Yuanmu, Kamaraju, N., Campione, Salvatore, Liu, Sheng, Reno, John L., Sinclair, Michael B., Prasankumar, Rohit P., and Brener, Igal. Fri .
"Transient GaAs plasmonic metasurfaces at terahertz frequencies". United States. https://doi.org/10.1021/acsphotonics.6b00735. https://www.osti.gov/servlets/purl/1338393.
@article{osti_1338393,
title = {Transient GaAs plasmonic metasurfaces at terahertz frequencies},
author = {Yang, Yuanmu and Kamaraju, N. and Campione, Salvatore and Liu, Sheng and Reno, John L. and Sinclair, Michael B. and Prasankumar, Rohit P. and Brener, Igal},
abstractNote = {Here we demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. In conclusion, the platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.},
doi = {10.1021/acsphotonics.6b00735},
journal = {ACS Photonics},
number = 1,
volume = 4,
place = {United States},
year = {Fri Dec 09 00:00:00 EST 2016},
month = {Fri Dec 09 00:00:00 EST 2016}
}
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