Pure electronic metal-insulator transition at the interface of complex oxides
Abstract
In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO 3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.
- Authors:
-
- Univ. of Arkansas, Fayetteville, AR (United States). Dept. of Physics
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics nad Astronomy
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source
- Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; Gordon and Betty Moore Foundation; University of Tennessee
- OSTI Identifier:
- 1326934
- Alternate Identifier(s):
- OSTI ID: 1379402
- Grant/Contract Number:
- AC02-06CH11357; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 6; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Meyers, D., Liu, Jian, Freeland, J. W., Middey, S., Kareev, M., Kwon, Jihwan, Zuo, J. M., Chuang, Yi-De, Kim, J. W., Ryan, P. J., and Chakhalian, J. Pure electronic metal-insulator transition at the interface of complex oxides. United States: N. p., 2016.
Web. doi:10.1038/srep27934.
Meyers, D., Liu, Jian, Freeland, J. W., Middey, S., Kareev, M., Kwon, Jihwan, Zuo, J. M., Chuang, Yi-De, Kim, J. W., Ryan, P. J., & Chakhalian, J. Pure electronic metal-insulator transition at the interface of complex oxides. United States. https://doi.org/10.1038/srep27934
Meyers, D., Liu, Jian, Freeland, J. W., Middey, S., Kareev, M., Kwon, Jihwan, Zuo, J. M., Chuang, Yi-De, Kim, J. W., Ryan, P. J., and Chakhalian, J. Tue .
"Pure electronic metal-insulator transition at the interface of complex oxides". United States. https://doi.org/10.1038/srep27934. https://www.osti.gov/servlets/purl/1326934.
@article{osti_1326934,
title = {Pure electronic metal-insulator transition at the interface of complex oxides},
author = {Meyers, D. and Liu, Jian and Freeland, J. W. and Middey, S. and Kareev, M. and Kwon, Jihwan and Zuo, J. M. and Chuang, Yi-De and Kim, J. W. and Ryan, P. J. and Chakhalian, J.},
abstractNote = {In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO 3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.},
doi = {10.1038/srep27934},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {Tue Jun 21 00:00:00 EDT 2016},
month = {Tue Jun 21 00:00:00 EDT 2016}
}
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Works referencing / citing this record:
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