Quantum memristors

Pfeiffer, P.; Egusquiza, I. L.; Di Ventra, M.; Sanz, M.; Solano, E.

doi:10.1038/srep29507

Title: Quantum memristors

Abstract

Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative device, whose decoherence mechanism is controlled by a continuous-measurement feedback scheme, which accounts for the memory. Indeed, we provide numerical simulations showing that memory effects actually persist in the quantum regime. Our quantization method, specifically designed for superconducting circuits, may be extended to other quantum platforms, allowing for memristor-type constructions in different quantum technologies. As a result, the proposed quantum memristor is then a building block for neuromorphic quantum computation and quantum simulations of non-Markovian systems.

Authors:

Pfeiffer, P. ^[1]; Egusquiza, I. L. ^[1]; Di Ventra, M. ^[2]; Sanz, M. ^[1]; Solano, E. ^[3]

Univ. of the Basque Country UPV/EHU, Bilbao (Spain)
Univ. of California, San Diego, La Jolla, CA (United States)
Univ. of the Basque Country UPV/EHU, Bilbao (Spain); IKERBASQUE, Basque Foundation for Science, Bilbao (Spain)

Publication Date:: Wed Jul 06 00:00:00 EDT 2016

Research Org.:: Univ. of California, San Diego, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1312950

Grant/Contract Number:: FG02-05ER46204

Resource Type:: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 6; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 97 MATHEMATICS AND COMPUTING

Citation Formats


                    Pfeiffer, P., Egusquiza, I. L., Di Ventra, M., Sanz, M., and Solano, E. Quantum memristors.  United States: N. p., 2016. 
Web.  doi:10.1038/srep29507.

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                    Pfeiffer, P., Egusquiza, I. L., Di Ventra, M., Sanz, M., & Solano, E. Quantum memristors.  United States.  https://doi.org/10.1038/srep29507

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                    Pfeiffer, P., Egusquiza, I. L., Di Ventra, M., Sanz, M., and Solano, E. Wed .  
"Quantum memristors".  United States.  https://doi.org/10.1038/srep29507.  https://www.osti.gov/servlets/purl/1312950.

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@article{osti_1312950,

  title        = {Quantum memristors},

  author       = {Pfeiffer, P. and Egusquiza, I. L. and Di Ventra, M. and Sanz, M. and Solano, E.},

  abstractNote = {Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative device, whose decoherence mechanism is controlled by a continuous-measurement feedback scheme, which accounts for the memory. Indeed, we provide numerical simulations showing that memory effects actually persist in the quantum regime. Our quantization method, specifically designed for superconducting circuits, may be extended to other quantum platforms, allowing for memristor-type constructions in different quantum technologies. As a result, the proposed quantum memristor is then a building block for neuromorphic quantum computation and quantum simulations of non-Markovian systems.},

  doi          = {10.1038/srep29507},

  journal      = {Scientific Reports},

  number       = ,

  volume       = 6,

  place        = {United States},

  year         = {Wed Jul 06 00:00:00 EDT 2016},

  month        = {Wed Jul 06 00:00:00 EDT 2016}

}

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