Antiferromagnetic Spin Wave Field-Effect Transistor
Abstract
In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. In conclusion, our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale.
- Authors:
-
- Carnegie Mellon Univ., Pittsburgh, PA (United States)
- Publication Date:
- Research Org.:
- Carnegie Mellon Univ., Pittsburgh, PA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1254841
- Grant/Contract Number:
- SC0012509; EFRI-1433496
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 6; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Spintronics; magnetic properties
Citation Formats
Cheng, Ran, Daniels, Matthew W., Zhu, Jian-Gang, and Xiao, Di. Antiferromagnetic Spin Wave Field-Effect Transistor. United States: N. p., 2016.
Web. doi:10.1038/srep24223.
Cheng, Ran, Daniels, Matthew W., Zhu, Jian-Gang, & Xiao, Di. Antiferromagnetic Spin Wave Field-Effect Transistor. United States. https://doi.org/10.1038/srep24223
Cheng, Ran, Daniels, Matthew W., Zhu, Jian-Gang, and Xiao, Di. Wed .
"Antiferromagnetic Spin Wave Field-Effect Transistor". United States. https://doi.org/10.1038/srep24223. https://www.osti.gov/servlets/purl/1254841.
@article{osti_1254841,
title = {Antiferromagnetic Spin Wave Field-Effect Transistor},
author = {Cheng, Ran and Daniels, Matthew W. and Zhu, Jian-Gang and Xiao, Di},
abstractNote = {In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. In conclusion, our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale.},
doi = {10.1038/srep24223},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {Wed Apr 06 00:00:00 EDT 2016},
month = {Wed Apr 06 00:00:00 EDT 2016}
}
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