Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe
Abstract
Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.
- Authors:
-
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1226042
- Report Number(s):
- BNL-108397-2015-JA
Journal ID: ISSN 0003-6951; R&D Project: MA012MABA; PO010; KC0202050; KC0201060
- Grant/Contract Number:
- SC00112704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 107; Journal Issue: 09; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Si, W., Zhang, C., Wu, L., Ozaki, T., Gu, G., and Li, Q. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe. United States: N. p., 2015.
Web. doi:10.1063/1.4929815.
Si, W., Zhang, C., Wu, L., Ozaki, T., Gu, G., & Li, Q. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe. United States. https://doi.org/10.1063/1.4929815
Si, W., Zhang, C., Wu, L., Ozaki, T., Gu, G., and Li, Q. Tue .
"Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe". United States. https://doi.org/10.1063/1.4929815. https://www.osti.gov/servlets/purl/1226042.
@article{osti_1226042,
title = {Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe},
author = {Si, W. and Zhang, C. and Wu, L. and Ozaki, T. and Gu, G. and Li, Q.},
abstractNote = {Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.},
doi = {10.1063/1.4929815},
journal = {Applied Physics Letters},
number = 09,
volume = 107,
place = {United States},
year = {Tue Sep 01 00:00:00 EDT 2015},
month = {Tue Sep 01 00:00:00 EDT 2015}
}
Web of Science
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