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Title: Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport

Abstract

We introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing; we do this in order to enhance the etch rate of electron-beam-induced etching. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. Moreover, the evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. Finally, the increased etch rate is attributed to photothermally enhanced Ti–F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.

Authors:
 [1];  [2];  [1];  [1];  [1];  [2]
+ Show Author Affiliations
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1185846
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 7; Journal Issue: 7; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; focused electron-beam-induced etching (FEBIE); focused electron-beam-induced processing (FEBIP); laser-assisted reaction; nanofabrication; Ti; XeF2

Citation Formats

Noh, J. H., Fowlkes, J. D., Timilsina, R., Stanford, M. G., Lewis, B. B., and Rack, P. D. Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport. United States: N. p., 2015. Web. doi:10.1021/am508443s.
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Noh, J. H., Fowlkes, J. D., Timilsina, R., Stanford, M. G., Lewis, B. B., & Rack, P. D. Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport. United States. https://doi.org/10.1021/am508443s
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Noh, J. H., Fowlkes, J. D., Timilsina, R., Stanford, M. G., Lewis, B. B., and Rack, P. D. Wed . "Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport". United States. https://doi.org/10.1021/am508443s. https://www.osti.gov/servlets/purl/1185846.
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@article{osti_1185846,
title = {Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport},
author = {Noh, J. H. and Fowlkes, J. D. and Timilsina, R. and Stanford, M. G. and Lewis, B. B. and Rack, P. D.},
abstractNote = {We introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing; we do this in order to enhance the etch rate of electron-beam-induced etching. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. Moreover, the evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. Finally, the increased etch rate is attributed to photothermally enhanced Ti–F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.},
doi = {10.1021/am508443s},
journal = {ACS Applied Materials and Interfaces},
number = 7,
volume = 7,
place = {United States},
year = {Wed Jan 28 00:00:00 EST 2015},
month = {Wed Jan 28 00:00:00 EST 2015}
}
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https://doi.org/10.1021/am508443s
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    Works referencing / citing this record:

    Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns
    journal, September 2019

    • Zhang, Cheng; Dyck, Ondrej; Garfinkel, David A.
    • Nanomaterials, Vol. 9, Issue 10
    • DOI: 10.3390/nano9101394

    Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns
    journal, September 2019

    • Zhang, Cheng; Dyck, Ondrej; Garfinkel, David A.
    • Nanomaterials, Vol. 9, Issue 10
    • DOI: 10.3390/nano9101394
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