High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

Fu, Houqiang; Fu, Kai; Huang, Xuanqi; Chen, Hong; Baranowski, Izak; Yang, Tsung-Han; Montes, Jossue; Zhao, Yuji

doi:10.1109/LED.2018.2837625

Title: High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

Abstract

This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN substrates using metalorganic chemical vapor deposition. The device with a 9-μm-thick drift layer exhibited a high breakdown voltage (V_bd) of 1.57 kV, a low ON-resistance (R_ON) of 0.45 mQ · cm² (or 0.70 mQ · cm² with current spreading considered) and a high Baliga's figure-of-merit (V $$2\atop{bd}$$/R_ON) of 5.5 GW/cm² (or 3.6 GW/cm²) without passivation or field plate, which are close to the theoretical limit of GaN. This technique enabled a significant reduction in leakage current (~10⁶ times at -300 V) and a huge enhancement in V bd (from ~300 V to 1.57 kV). Furthermore, the device showed good forward characteristics with a turn-ON voltage of 3.5 V, an ON-current of ~2 kA/cm² (or 1.3 kA/cm²), an ON/OFF ratio of -10⁹, and an ideality factor of 1.4. This work shows the HPET can serve as an effective, low cost, and easy-to-implement edge termination technique for high voltage and high power GaN p-n power diodes.

Authors:

^[1]; Fu, Kai ^[1];

^[1]; Chen, Hong ^[1]; Baranowski, Izak ^[1]; Yang, Tsung-Han ^[1]; Montes, Jossue ^[1]; Zhao, Yuji ^[1]

Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering

Publication Date:: Wed May 16 00:00:00 EDT 2018

Research Org.:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1505564

Grant/Contract Number:: AR0000868

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Electron Device Letters

Additional Journal Information:: Journal Volume: 39; Journal Issue: 7; Journal ID: ISSN 0741-3106

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; 36 MATERIALS SCIENCE; Gallium nitride; wide bandgap semiconductor; p-n diodes; power electronics; breakdown; edge termination

Citation Formats


                    Fu, Houqiang, Fu, Kai, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Yang, Tsung-Han, Montes, Jossue, and Zhao, Yuji. High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination.  United States: N. p., 2018. 
Web.  doi:10.1109/LED.2018.2837625.

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                    Fu, Houqiang, Fu, Kai, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Yang, Tsung-Han, Montes, Jossue, & Zhao, Yuji. High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination.  United States.  https://doi.org/10.1109/LED.2018.2837625

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                    Fu, Houqiang, Fu, Kai, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Yang, Tsung-Han, Montes, Jossue, and Zhao, Yuji. Wed .  
"High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination".  United States.  https://doi.org/10.1109/LED.2018.2837625.  https://www.osti.gov/servlets/purl/1505564.

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@article{osti_1505564,

  title        = {High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination},

  author       = {Fu, Houqiang and Fu, Kai and Huang, Xuanqi and Chen, Hong and Baranowski, Izak and Yang, Tsung-Han and Montes, Jossue and Zhao, Yuji},

  abstractNote = {This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN substrates using metalorganic chemical vapor deposition. The device with a 9-μm-thick drift layer exhibited a high breakdown voltage (Vbd) of 1.57 kV, a low ON-resistance (RON) of 0.45 mQ · cm2 (or 0.70 mQ · cm2 with current spreading considered) and a high Baliga's figure-of-merit (V $2\atop{bd}$/RON) of 5.5 GW/cm2 (or 3.6 GW/cm2) without passivation or field plate, which are close to the theoretical limit of GaN. This technique enabled a significant reduction in leakage current (~106 times at -300 V) and a huge enhancement in V bd (from ~300 V to 1.57 kV). Furthermore, the device showed good forward characteristics with a turn-ON voltage of 3.5 V, an ON-current of ~2 kA/cm2 (or 1.3 kA/cm2), an ON/OFF ratio of -109, and an ideality factor of 1.4. This work shows the HPET can serve as an effective, low cost, and easy-to-implement edge termination technique for high voltage and high power GaN p-n power diodes.},

  doi          = {10.1109/LED.2018.2837625},

  journal      = {IEEE Electron Device Letters},

  number       = 7,

  volume       = 39,

  place        = {United States},

  year         = {Wed May 16 00:00:00 EDT 2018},

  month        = {Wed May 16 00:00:00 EDT 2018}

}

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Works referencing / citing this record:

Dopant profiling in p-i-n GaN structures using secondary electrons
journal, July 2019

Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai
Journal of Applied Physics, Vol. 126, Issue 1
DOI: 10.1063/1.5096273

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Title: High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

Abstract

Citation Formats

Dopant profiling in p-i-n GaN structures using secondary electrons journal, July 2019

Dopant profiling in p-i-n GaN structures using secondary electrons
journal, July 2019