Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]
Abstract
Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (–201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.
- Authors:
-
[1];
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Colorado School of Mines, Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1339246
- Report Number(s):
- NREL/JA-5K00-67538
Journal ID: ISSN 2159-6859
- Grant/Contract Number:
- AC36-08GO28308; AC36-99GO10337
- Resource Type:
- Accepted Manuscript
- Journal Name:
- MRS Communications
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 4; Journal ID: ISSN 2159-6859
- Publisher:
- Materials Research Society - Cambridge University Press
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; thin films; gallium oxide; optoelectronics; phase transformation; dopants
Citation Formats
Garten, Lauren M., Zakutayev, Andriy, Perkins, John D., Gorman, Brian P., Ndione, Paul F., and Ginley, David S. Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]. United States: N. p., 2016.
Web. doi:10.1557/mrc.2016.50.
Garten, Lauren M., Zakutayev, Andriy, Perkins, John D., Gorman, Brian P., Ndione, Paul F., & Ginley, David S. Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]. United States. https://doi.org/10.1557/mrc.2016.50
Garten, Lauren M., Zakutayev, Andriy, Perkins, John D., Gorman, Brian P., Ndione, Paul F., and Ginley, David S. Mon .
"Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]". United States. https://doi.org/10.1557/mrc.2016.50. https://www.osti.gov/servlets/purl/1339246.
@article{osti_1339246,
title = {Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga2O3 thin films grown by pulsed laser deposition]},
author = {Garten, Lauren M. and Zakutayev, Andriy and Perkins, John D. and Gorman, Brian P. and Ndione, Paul F. and Ginley, David S.},
abstractNote = {Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (–201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.},
doi = {10.1557/mrc.2016.50},
journal = {MRS Communications},
number = 4,
volume = 6,
place = {United States},
year = {Mon Nov 21 00:00:00 EST 2016},
month = {Mon Nov 21 00:00:00 EST 2016}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 14 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3: Sn
journal, August 2006
- Zhang, Jungang; Xia, Changtai; Deng, Qun
- Journal of Physics and Chemistry of Solids, Vol. 67, Issue 8
Thermodynamic Assessment of the Gallium-Oxygen System
journal, April 2004
- Zinkevich, Matvei; Aldinger, Fritz
- Journal of the American Ceramic Society, Vol. 87, Issue 4
Epitaxial stabilization of pseudomorphic α-Ga 2 O 3 on sapphire (0001)
journal, December 2014
- Schewski, Robert; Wagner, Günter; Baldini, Michele
- Applied Physics Express, Vol. 8, Issue 1
Homo- and heteroepitaxial growth of Sn-doped β-Ga 2 O 3 layers by MOVPE
journal, January 2015
- Gogova, D.; Schmidbauer, M.; Kwasniewski, A.
- CrystEngComm, Vol. 17, Issue 35
?-Gallium Oxide as Oxygen Gas Sensors at a High Temperature
journal, September 2007
- Bartic, Marilena; Baban, Cristian-Ioan; Suzuki, Hisao
- Journal of the American Ceramic Society, Vol. 90, Issue 9
Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor
journal, February 2006
- Matsuzaki, Kosuke; Hiramatsu, Hidenori; Nomura, Kenji
- Thin Solid Films, Vol. 496, Issue 1
Development of gallium oxide power devices: Development of gallium oxide power devices
journal, November 2013
- Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito
- physica status solidi (a), Vol. 211, Issue 1
Oxygen deficiency and Sn doping of amorphous Ga 2 O 3
journal, January 2016
- Heinemann, M. D.; Berry, J.; Teeter, G.
- Applied Physics Letters, Vol. 108, Issue 2
Band bending and surface defects in β -Ga 2 O 3
journal, April 2012
- Lovejoy, T. C.; Chen, Renyu; Zheng, X.
- Applied Physics Letters, Vol. 100, Issue 18
Dopant activation in Sn-doped Ga 2 O 3 investigated by X-ray absorption spectroscopy
journal, December 2015
- Siah, S. C.; Brandt, R. E.; Lim, K.
- Applied Physics Letters, Vol. 107, Issue 25
Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures
journal, May 2002
- Orita, Masahiro; Hiramatsu, Hidenori; Ohta, Hiromichi
- Thin Solid Films, Vol. 411, Issue 1
Works referencing / citing this record:
Strain in pseudomorphic monoclinic Ga 2 O 3 -based heterostructures: Pseudomorphic monoclinic heterostructures
journal, May 2017
- Grundmann, Marius
- physica status solidi (b), Vol. 254, Issue 9
Highly conductive homoepitaxial Si-doped Ga 2 O 3 films on (010) β-Ga 2 O 3 by pulsed laser deposition
journal, July 2017
- Leedy, Kevin D.; Chabak, Kelson D.; Vasilyev, Vladimir
- Applied Physics Letters, Vol. 111, Issue 1
A review of Ga 2 O 3 materials, processing, and devices
journal, March 2018
- Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H.
- Applied Physics Reviews, Vol. 5, Issue 1
Epitaxial growth and interface band alignment studies of all oxide α-Cr 2 O 3 /β-Ga 2 O 3 p-n heterojunction
journal, August 2019
- Ghosh, Sahadeb; Baral, Madhusmita; Kamparath, Rajiv
- Applied Physics Letters, Vol. 115, Issue 6
Structural, Optical, and Electrical Characterization of β -Ga 2 O 3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing
journal, January 2018
- Arias, Abraham; Nedev, Nicola; Ghose, Susmita
- Advances in Materials Science and Engineering, Vol. 2018