Ionic liquid versus SiO2 gated a-IGZO thin film transistors: A direct comparison
Abstract
Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~105, a promising field effect mobility of 14.20 cm2V–1s–1, and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm2V–1s–1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.
- Authors:
-
- Univ. of Tennessee, Knoxville, TN (United States)
- Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1286908
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ECS Journal of Solid State Science and Technology
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 9; Journal ID: ISSN 2162-8769
- Publisher:
- Electrochemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Pudasaini, Pushpa Raj, Noh, Joo Hyon, Wong, Anthony T., Haglund, Amanda V., Dai, Sheng, Ward, Thomas Zac, Mandrus, David, and Rack, Philip D. Ionic liquid versus SiO2 gated a-IGZO thin film transistors: A direct comparison. United States: N. p., 2015.
Web. doi:10.1149/2.0141509jss.
Pudasaini, Pushpa Raj, Noh, Joo Hyon, Wong, Anthony T., Haglund, Amanda V., Dai, Sheng, Ward, Thomas Zac, Mandrus, David, & Rack, Philip D. Ionic liquid versus SiO2 gated a-IGZO thin film transistors: A direct comparison. United States. https://doi.org/10.1149/2.0141509jss
Pudasaini, Pushpa Raj, Noh, Joo Hyon, Wong, Anthony T., Haglund, Amanda V., Dai, Sheng, Ward, Thomas Zac, Mandrus, David, and Rack, Philip D. Wed .
"Ionic liquid versus SiO2 gated a-IGZO thin film transistors: A direct comparison". United States. https://doi.org/10.1149/2.0141509jss. https://www.osti.gov/servlets/purl/1286908.
@article{osti_1286908,
title = {Ionic liquid versus SiO2 gated a-IGZO thin film transistors: A direct comparison},
author = {Pudasaini, Pushpa Raj and Noh, Joo Hyon and Wong, Anthony T. and Haglund, Amanda V. and Dai, Sheng and Ward, Thomas Zac and Mandrus, David and Rack, Philip D.},
abstractNote = {Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~105, a promising field effect mobility of 14.20 cm2V–1s–1, and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm2V–1s–1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.},
doi = {10.1149/2.0141509jss},
journal = {ECS Journal of Solid State Science and Technology},
number = 9,
volume = 4,
place = {United States},
year = {Wed Aug 12 00:00:00 EDT 2015},
month = {Wed Aug 12 00:00:00 EDT 2015}
}
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