Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport
Abstract
We introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing; we do this in order to enhance the etch rate of electron-beam-induced etching. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. Moreover, the evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. Finally, the increased etch rate is attributed to photothermally enhanced Ti–F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.
- Authors:
-
- Univ. of Tennessee, Knoxville, TN (United States)
- Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1185846
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 7; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; focused electron-beam-induced etching (FEBIE); focused electron-beam-induced processing (FEBIP); laser-assisted reaction; nanofabrication; Ti; XeF2
Citation Formats
Noh, J. H., Fowlkes, J. D., Timilsina, R., Stanford, M. G., Lewis, B. B., and Rack, P. D. Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport. United States: N. p., 2015.
Web. doi:10.1021/am508443s.
Noh, J. H., Fowlkes, J. D., Timilsina, R., Stanford, M. G., Lewis, B. B., & Rack, P. D. Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport. United States. https://doi.org/10.1021/am508443s
Noh, J. H., Fowlkes, J. D., Timilsina, R., Stanford, M. G., Lewis, B. B., and Rack, P. D. Wed .
"Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport". United States. https://doi.org/10.1021/am508443s. https://www.osti.gov/servlets/purl/1185846.
@article{osti_1185846,
title = {Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport},
author = {Noh, J. H. and Fowlkes, J. D. and Timilsina, R. and Stanford, M. G. and Lewis, B. B. and Rack, P. D.},
abstractNote = {We introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing; we do this in order to enhance the etch rate of electron-beam-induced etching. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. Moreover, the evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. Finally, the increased etch rate is attributed to photothermally enhanced Ti–F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.},
doi = {10.1021/am508443s},
journal = {ACS Applied Materials and Interfaces},
number = 7,
volume = 7,
place = {United States},
year = {Wed Jan 28 00:00:00 EST 2015},
month = {Wed Jan 28 00:00:00 EST 2015}
}
Web of Science
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Works referencing / citing this record:
Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns
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