Title: All diamond self-aligned thin film transistor

Abstract

A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

Inventors:

Gerbi, Jennifer ^[1]

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1. Champaign, IL

Issue Date:

Tue Jul 01 00:00:00 EDT 2008

Research Org.:

Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

984484

Patent Number(s):

7394103

Application Number:

11/226,703

Assignee:

UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/0237 - {Materials}
H01L21/02376 - {Carbon, e.g. diamond-like carbon}
H01L21/0242 - {Crystalline insulating materials}
H01L21/02444 - {Carbon, e.g. diamond-like carbon}
H01L21/02527 - {Carbon, e.g. diamond-like carbon}
H01L21/02579 - {P-type}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02634 - {Homoepitaxy}
H01L21/02658 - {Pretreatments
H01L29/66037 - {the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices}

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DOE Contract Number:  

W-31109-ENG-38

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE