Method for formation of thin film transistors on plastic substrates
Abstract
A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.
- Inventors:
-
- Mountain View, CA
- San Ramon, CA
- Portola Valley, CA
- Livermore, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 871878
- Patent Number(s):
- 5817550
- Application Number:
- 08/611318
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; formation; film; transistors; plastic; substrates; process; tfts; replaces; standard; transistor; fabrication; techniques; sufficiently; processing; temperatures; inexpensive; glass; quartz; silicon; wafer-based; relies; depositing; semiconductors; dielectrics; metals; crystallizing; doping; semiconductor; layers; tft; pulsed; energy; source; creating; top-gate; self-aligned; back-gate; structures; enables; amorphous; polycrystalline; channel; prevent; damage; cost; electronics; flat; panel; displays; portable; pulsed energy; plastic substrate; prevent damage; film transistors; energy source; semiconductor layer; silicon wafer; flat panel; fabrication techniques; processing temperatures; process enables; panel displays; panel display; semiconductor layers; plastic substrates; temperatures sufficient; processing temperature; film transistor; doping semiconductor; cost electronic; /438/
Citation Formats
Carey, Paul G, Smith, Patrick M, Sigmon, Thomas W, and Aceves, Randy C. Method for formation of thin film transistors on plastic substrates. United States: N. p., 1998.
Web.
Carey, Paul G, Smith, Patrick M, Sigmon, Thomas W, & Aceves, Randy C. Method for formation of thin film transistors on plastic substrates. United States.
Carey, Paul G, Smith, Patrick M, Sigmon, Thomas W, and Aceves, Randy C. Tue .
"Method for formation of thin film transistors on plastic substrates". United States. https://www.osti.gov/servlets/purl/871878.
@article{osti_871878,
title = {Method for formation of thin film transistors on plastic substrates},
author = {Carey, Paul G and Smith, Patrick M and Sigmon, Thomas W and Aceves, Randy C},
abstractNote = {A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 06 00:00:00 EDT 1998},
month = {Tue Oct 06 00:00:00 EDT 1998}
}