Semiconductor radiation detector with internal gain
Abstract
An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.
- Inventors:
-
- Los Angeles, CA
- Sherman Oaks, CA
- Westlake Village, CA
- Issue Date:
- Research Org.:
- Photon Imaging, Inc. (Northridge, CA)
- OSTI Identifier:
- 875143
- Patent Number(s):
- 6541836
- Application Number:
- 09/835829
- Assignee:
- Photon Imaging, Inc. (Northridge, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG03-99ER82853
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- semiconductor; radiation; detector; internal; avalanche; drift; photodetector; adp; incorporates; extremely; capacitance; silicon; sdp; mitigates; surface; leakage; current; noise; apd; coupled; scintillators; csitl; naitl; form; volume; scintillation; type; gamma; ray; detectors; spectroscopy; photon; counting; etc; arrays; adps; replace; photomultiplier; tubes; pmts; conjunction; crystals; conventional; cameras; nuclear; medical; imaging; radiation detector; leakage current; /257/
Citation Formats
Iwanczyk, Jan, Patt, Bradley E, and Vilkelis, Gintas. Semiconductor radiation detector with internal gain. United States: N. p., 2003.
Web.
Iwanczyk, Jan, Patt, Bradley E, & Vilkelis, Gintas. Semiconductor radiation detector with internal gain. United States.
Iwanczyk, Jan, Patt, Bradley E, and Vilkelis, Gintas. Wed .
"Semiconductor radiation detector with internal gain". United States. https://www.osti.gov/servlets/purl/875143.
@article{osti_875143,
title = {Semiconductor radiation detector with internal gain},
author = {Iwanczyk, Jan and Patt, Bradley E and Vilkelis, Gintas},
abstractNote = {An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 2003},
month = {Wed Jan 01 00:00:00 EST 2003}
}
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Works referenced in this record:
Chapter 14 Electronics for X-Ray and Gamma Ray Spectrometers
book, January 1995
- Iwanczyk, Jan S.; Patt, Bradley E.
- Semiconductors for Room Temperature Nuclear Detector Applications, p. 531-560
Scintillation Camera
journal, January 1958
- Anger, Hal O.
- Review of Scientific Instruments, Vol. 29, Issue 1
Large area silicon drift detectors for X-rays-new results
journal, June 1999
- Iwanczyk, J. S.; Patt, B. E.; Tull, C. R.
- IEEE Transactions on Nuclear Science, Vol. 46, Issue 3