Method of passivating semiconductor surfaces
Abstract
A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.
- Inventors:
-
- Golden, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 867428
- Patent Number(s):
- 4935384
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; passivating; semiconductor; surfaces; iii-v; ii-vi; compound; selecting; material; lattice; constant; substantially; mismatched; grown; ultrathin; layer; surface; thickness; sufficient; maintain; coherent; interface; addition; device; formed; disclosed; thickness sufficient; lattice constant; semiconductor compound; semiconductor surface; semiconductor surfaces; ii-vi semiconductor; passivating semiconductor; device formed; constant substantially; /438/117/136/148/257/
Citation Formats
Wanlass, Mark W. Method of passivating semiconductor surfaces. United States: N. p., 1990.
Web.
Wanlass, Mark W. Method of passivating semiconductor surfaces. United States.
Wanlass, Mark W. Mon .
"Method of passivating semiconductor surfaces". United States. https://www.osti.gov/servlets/purl/867428.
@article{osti_867428,
title = {Method of passivating semiconductor surfaces},
author = {Wanlass, Mark W},
abstractNote = {A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1990},
month = {Mon Jan 01 00:00:00 EST 1990}
}
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