Surface passivation process of compound semiconductor material using UV photosulfidation
Abstract
A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.
- Inventors:
-
- Edgewood, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 870072
- Patent Number(s):
- 5451542
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-76
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- surface; passivation; process; compound; semiconductor; material; photosulfidation; method; passivating; surfaces; photolytically; disrupting; molecular; sulfur; vapor; ultraviolet; radiation; form; reactive; reacts; passivates; semiconductors; surface passivation; compound semiconductors; ultraviolet radiation; semiconductor material; semiconductor surface; compound semiconductor; semiconductor surfaces; passivation process; surface pass; /438/
Citation Formats
Ashby, Carol I. H. Surface passivation process of compound semiconductor material using UV photosulfidation. United States: N. p., 1995.
Web.
Ashby, Carol I. H. Surface passivation process of compound semiconductor material using UV photosulfidation. United States.
Ashby, Carol I. H. Sun .
"Surface passivation process of compound semiconductor material using UV photosulfidation". United States. https://www.osti.gov/servlets/purl/870072.
@article{osti_870072,
title = {Surface passivation process of compound semiconductor material using UV photosulfidation},
author = {Ashby, Carol I. H.},
abstractNote = {A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1995},
month = {Sun Jan 01 00:00:00 EST 1995}
}
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Works referenced in this record:
Ultraviolet photosulfidation of III‐V compound semiconductors: A new approach to surface passivation
journal, May 1994
- Ashby, Carol I. H.; Zavadil, Kevin R.; Howard, Arnold J.
- Applied Physics Letters, Vol. 64, Issue 18
Nearly ideal electronic properties of sulfide coated GaAs surfaces
journal, August 1987
- Yablonovitch, E.; Sandroff, C. J.; Bhat, R.
- Applied Physics Letters, Vol. 51, Issue 6
Ultraviolet photoemission studies of GaAs(100) surfaces chemically stabilized by H2S treatments
journal, July 1989
- Tiedje, T.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, Issue 4
Ultraviolet photosulfidation of III–V compound semiconductors for electronic passivation
journal, July 1994
- Zavadil, Kevin R.; Ashby, Carol I. H.; Howard, Arnold J.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, Issue 4