Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
Abstract
A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.
- Inventors:
-
- Princeton, NJ
- Trenton, NJ
- Issue Date:
- Research Org.:
- RCA Corp
- OSTI Identifier:
- 864162
- Patent Number(s):
- 4322253
- Assignee:
- RCA Corporation (New York, NY)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC03-78ET21074
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; selective; crystalline; silicon; regions; containing; entrapped; hydrogen; laser; treatment; novel; rich; single; material; band; gap; energy; fabricated; forming; amorphous; region; graded; crystallinity; thereafter; contacting; atomic; followed; pulsed; annealing; sufficient; power; duration; recrystallize; out-gasing; fabricate; semi-conductor; devices; solar; cells; surface; window; silicon material; gap energy; atomic hydrogen; laser annealing; regions containing; thereafter contacting; single crystalline; band gap; solar cell; solar cells; pulsed laser; silicon solar; single crystal; crystalline silicon; hydrogen rich; semi-conductor device; sufficient power; sufficient duration; surface window; containing entrapped; rich single; selective crystalline; novel hydrogen; graded crystallinity; silicon region; amorphous region; laser treatment; /438/117/136/219/257/427/
Citation Formats
Pankove, Jacques I, and Wu, Chung P. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment. United States: N. p., 1982.
Web.
Pankove, Jacques I, & Wu, Chung P. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment. United States.
Pankove, Jacques I, and Wu, Chung P. Fri .
"Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment". United States. https://www.osti.gov/servlets/purl/864162.
@article{osti_864162,
title = {Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment},
author = {Pankove, Jacques I and Wu, Chung P},
abstractNote = {A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1982},
month = {Fri Jan 01 00:00:00 EST 1982}
}
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