Method of producing hydrogenated amorphous silicon film
Abstract
This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.
- Inventors:
-
- Wantagh, NY
- Issue Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- OSTI Identifier:
- 863738
- Patent Number(s):
- 4237150
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- EY-76-C-02-0016
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; producing; hydrogenated; amorphous; silicon; film; relates; produced; thermally; decomposing; silane; sih; gases; comprising; tungsten; carbon; foil; heated; temperature; 1400; degree; -1600; vacuum; 10; -6; 19; -4; torr; form; gaseous; mixture; atomic; hydrogen; depositing; gaseos; substrate; independent; outside; source; thermal; decomposition; presence; ammonia; atmosphere; chamber; enhances; photoconductivity; gases comprising; thermally decomposing; atomic hydrogen; silicon film; thermal decomposition; vacuum chamber; gaseous mixture; amorphous silicon; hydrogenated amorphous; producing hydrogen; producing hydrogenated; ammonia atmosphere; silicon produced; form hydrogen; form hydrogenated; /438/136/252/423/427/428/
Citation Formats
Wiesmann, Harold J. Method of producing hydrogenated amorphous silicon film. United States: N. p., 1980.
Web.
Wiesmann, Harold J. Method of producing hydrogenated amorphous silicon film. United States.
Wiesmann, Harold J. Tue .
"Method of producing hydrogenated amorphous silicon film". United States. https://www.osti.gov/servlets/purl/863738.
@article{osti_863738,
title = {Method of producing hydrogenated amorphous silicon film},
author = {Wiesmann, Harold J},
abstractNote = {This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1980},
month = {Tue Jan 01 00:00:00 EST 1980}
}
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