Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.
Abstract
High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.
- Inventors:
-
- Langhorne, PA
- Plainsboro, NJ
- Issue Date:
- OSTI Identifier:
- 879328
- Patent Number(s):
- 5646050
- Application Number:
- 08/600154
- Assignee:
- Amoco/Enron Solar (Frederick, MD)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02B - CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- DOE Contract Number:
- ZAN-4-13318-01
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Li, Yaun-Min, Bennett, Murray S, and Yang, Liyou. Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.. United States: N. p., 1997.
Web.
Li, Yaun-Min, Bennett, Murray S, & Yang, Liyou. Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.. United States.
Li, Yaun-Min, Bennett, Murray S, and Yang, Liyou. Tue .
"Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.". United States. https://www.osti.gov/servlets/purl/879328.
@article{osti_879328,
title = {Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.},
author = {Li, Yaun-Min and Bennett, Murray S and Yang, Liyou},
abstractNote = {High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 08 00:00:00 EDT 1997},
month = {Tue Jul 08 00:00:00 EDT 1997}
}
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