Process for forming retrograde profiles in silicon
Abstract
A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- OSTI Identifier:
- 379937
- Patent Number(s):
- 5565377
- Application Number:
- PAN: 8-329,959
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 15 Oct 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SILICON; CRYSTAL DOPING; MELTING; AMBIENT TEMPERATURE; LASER RADIATION; SURFACE TREATMENTS; MORPHOLOGY
Citation Formats
Weiner, K H, and Sigmon, T W. Process for forming retrograde profiles in silicon. United States: N. p., 1996.
Web.
Weiner, K H, & Sigmon, T W. Process for forming retrograde profiles in silicon. United States.
Weiner, K H, and Sigmon, T W. Tue .
"Process for forming retrograde profiles in silicon". United States.
@article{osti_379937,
title = {Process for forming retrograde profiles in silicon},
author = {Weiner, K H and Sigmon, T W},
abstractNote = {A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 15 00:00:00 EDT 1996},
month = {Tue Oct 15 00:00:00 EDT 1996}
}
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