Space charge trap-assisted recombination suppressing layer for low-voltage diode operation
Abstract
Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.
- Inventors:
- Issue Date:
- Research Org.:
- Stanford Univ., CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 2222039
- Patent Number(s):
- 11715809
- Application Number:
- 17/358,980
- Assignee:
- The Board of Trustees of the Leland Stanford Junior University (Stanford, CA)
- DOE Contract Number:
- SC0001293; SC0019140
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 06/25/2021
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Santhanam, Parthiban, and Fan, Shanhui. Space charge trap-assisted recombination suppressing layer for low-voltage diode operation. United States: N. p., 2023.
Web.
Santhanam, Parthiban, & Fan, Shanhui. Space charge trap-assisted recombination suppressing layer for low-voltage diode operation. United States.
Santhanam, Parthiban, and Fan, Shanhui. Tue .
"Space charge trap-assisted recombination suppressing layer for low-voltage diode operation". United States. https://www.osti.gov/servlets/purl/2222039.
@article{osti_2222039,
title = {Space charge trap-assisted recombination suppressing layer for low-voltage diode operation},
author = {Santhanam, Parthiban and Fan, Shanhui},
abstractNote = {Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 01 00:00:00 EDT 2023},
month = {Tue Aug 01 00:00:00 EDT 2023}
}
Works referenced in this record:
Method of Manufacture of German um-Silicon-Tin Heterojunction Bipolar Transistor Devices
patent-application, September 2019
- Kim, Matthew H.
- US Patent Application 16/424457; 20190296131
Thermo-electrically pumped light-emitting diodes
patent, February 2019
- Santhanam, Parthiban; Gray, Dodd Joseph; Ram, Rajeev Jagga
- US Patent Document 10,205,046
Phonon-recyling light-emitting diodes
patent, January 2017
- Santhanam, Parthiban; Gray, Dodd Joseph; Ram, Rajeev Jagga
- US Patent Document 9,557,215
Design for enhanced thermo-electric pumping in light emitting diodes
journal, September 2013
- Gray, Dodd J.; Santhanam, Parthiban; Ram, Rajeev J.
- Applied Physics Letters, Vol. 103, Issue 12