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Title: Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition

Patent ·
OSTI ID:1020251
 [1];  [1];  [1]
  1. Albuquerque, NM
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Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the surface of the porous layer. A plasma can then be used to react a plurality of second molecules with the first layer of first molecules to form a first layer of a barrier layer. The barrier layers can seal the pores of the porous material, function as a diffusion barrier, be conformal, and/or have a negligible impact on the overall ILD k value of the porous material.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
STC.UNM (Albuquerque, NM)
Patent Number(s):
7,947,579
Application Number:
11/673,190
OSTI ID:
1020251
Country of Publication:
United States
Language:
English

References (4)

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process journal June 2005
Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing journal January 2003
Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition journal August 2006
The application of atomic layer deposition for metallization of 65 nm and beyond journal February 2006

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