Efficient black silicon photovoltaic devices with enhanced blue response
Abstract
A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1892619
- Patent Number(s):
- 11251318
- Application Number:
- 14/002,950
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 03/08/2011
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Oh, Jihun, Branz, Howard M., and Yuan, Hao-Chih. Efficient black silicon photovoltaic devices with enhanced blue response. United States: N. p., 2022.
Web.
Oh, Jihun, Branz, Howard M., & Yuan, Hao-Chih. Efficient black silicon photovoltaic devices with enhanced blue response. United States.
Oh, Jihun, Branz, Howard M., and Yuan, Hao-Chih. Tue .
"Efficient black silicon photovoltaic devices with enhanced blue response". United States. https://www.osti.gov/servlets/purl/1892619.
@article{osti_1892619,
title = {Efficient black silicon photovoltaic devices with enhanced blue response},
author = {Oh, Jihun and Branz, Howard M. and Yuan, Hao-Chih},
abstractNote = {A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 15 00:00:00 EST 2022},
month = {Tue Feb 15 00:00:00 EST 2022}
}
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