High quality group-III metal nitride crystals, methods of making, and methods of use
Abstract
High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.
- Inventors:
- Issue Date:
- Research Org.:
- Soraa, Inc., Fremont, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1531978
- Patent Number(s):
- 9589792
- Application Number:
- 14/089,281
- Assignee:
- Soraa, Inc. (Fremont, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AR0000020
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013-11-25
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Jiang, Wenkan, D'Evelyn, Mark P., Kamber, Derrick S., Ehrentraut, Dirk, and Krames, Michael. High quality group-III metal nitride crystals, methods of making, and methods of use. United States: N. p., 2017.
Web.
Jiang, Wenkan, D'Evelyn, Mark P., Kamber, Derrick S., Ehrentraut, Dirk, & Krames, Michael. High quality group-III metal nitride crystals, methods of making, and methods of use. United States.
Jiang, Wenkan, D'Evelyn, Mark P., Kamber, Derrick S., Ehrentraut, Dirk, and Krames, Michael. Tue .
"High quality group-III metal nitride crystals, methods of making, and methods of use". United States. https://www.osti.gov/servlets/purl/1531978.
@article{osti_1531978,
title = {High quality group-III metal nitride crystals, methods of making, and methods of use},
author = {Jiang, Wenkan and D'Evelyn, Mark P. and Kamber, Derrick S. and Ehrentraut, Dirk and Krames, Michael},
abstractNote = {High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 07 00:00:00 EST 2017},
month = {Tue Mar 07 00:00:00 EST 2017}
}
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