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Title: Transparent group III metal nitride and method of manufacture

Patent ·
OSTI ID:1531968
; ;

Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.

Research Organization:
Soraa, Inc., Fremont, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AR0000020; IIP-1026896
Assignee:
Soraa, Inc. (Fremont, CA)
Patent Number(s):
9,543,392
Application Number:
14/485,516
OSTI ID:
1531968
Resource Relation:
Patent File Date: 2014-09-12
Country of Publication:
United States
Language:
English

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