Demonstration of electronic pattern switching and 10x pattern demagnification in a maskless micro-ion beam reduction lithography system
A proof-of-principle ion projection lithography (IPL) system called Maskless Micro-ion beam Reduction Lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory (LBNL) for future integrated circuits (ICs) manufacturing and thin film media patterning [1]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [2] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp RF plasma generator, a multi-beamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on PMMA and Shipley UVII-HS resists using 75 keV H+ are presented in this paper. Proof-of-principle electronic pattern switching together with 10x reduction ion optics (using a pattern generator made of nine 50-{micro}m switchable apertures) has been performed and is reported in this paper. In addition, the fabrication of a micro-fabricated pattern generator [3] on an SOI membrane is also presented.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 799568
- Report Number(s):
- LBNL-49346; R&D Project: Z20042; B& R YN0100000; TRN: US0203756
- Resource Relation:
- Conference: 46th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, Anaheim, CA (US), 05/28/2002--05/31/2002; Other Information: PBD: 31 May 2002
- Country of Publication:
- United States
- Language:
- English
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