Maskless micro-ion-beam reduction lithography system
Patent
·
OSTI ID:1175341
A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.
- Research Organization:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- 6,888,146
- Application Number:
- 09/289,332
- OSTI ID:
- 1175341
- Country of Publication:
- United States
- Language:
- English
A neutron tube with constant output (1010 n/sec) for activation analysis and reactor applications
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journal | March 1965 |
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