Hyperfine interactions in the cubic semiconductor CdO
- Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, Casilla de Correo No. 67, 1900 La Plata, Argentina (AR)
The time-differential perturbed angular correlation technique has been applied using {sup 111}In probes, which decay through electron capture to {sup 111}Cd, to study the hyperfine interaction in cubic cadmium oxide, in the temperature range RT--740 {degree}C (RT denotes room temperature). The main fraction of probes are located in perfect-lattice sites, with null electric field gradient in agreement with crystalline-structure considerations. Around 25% of the total intensity shows an electric-field-gradient distribution around {ital V}{sub {ital zz}}=0. This corresponds to probes located in sites perturbed by the vicinity of oxygen vacancies in the lattice. The temperature-independent behavior of the measured hyperfine parameters is discussed in terms of conductivity and band-structure properties of the semiconductor. No time-dependent interaction arising from nuclear electron-capture aftereffects are seen in this experiment. This is in agreement with a previously reported model of aftereffect processes which states that only holes trapped in impurity levels inside the band gap of the semiconductor can give rise to detectable fluctuating interactions.
- OSTI ID:
- 7172449
- Journal Information:
- Physical Review, B: Condensed Matter; (USA), Vol. 41:3; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CADMIUM OXIDES
BAND THEORY
CRYSTAL STRUCTURE
CUBIC LATTICES
DIFFERENTIAL PAC
ELECTRONIC STRUCTURE
HYPERFINE STRUCTURE
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
ANGULAR CORRELATION
CADMIUM COMPOUNDS
CHALCOGENIDES
CORRELATIONS
CRYSTAL LATTICES
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PERTURBED ANGULAR CORRELATION
360204* - Ceramics
Cermets
& Refractories- Physical Properties