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Title: Perturbed angular-correlation spectroscopy of defects in ceria

Miscellaneous ·
OSTI ID:5475054

Dilute indium dopants in cerium oxides were studied by {sup 111}In/Cd Perturbed Angular Correlation (PAC) spectroscopy. Oxygen concentration in the cerium oxides was controlled through doping or high-temperature vacuum cleaning; four different defect complexes were found. At low temperatures, evidence is found of interaction with an electronic hole trapped by {sup 111}Cd after the radioactive decay of the {sup 111}In parent, the aftereffects interaction. In undoped ceria, indium always forms a defect complex with a tightly bound oxygen vacancy (A site). The A site has an axially symmetric electric field gradient (efg) and V{sub zz}(lat) is 0.87 (10{sup 16}Volts/cm{sup 2}). The efg symmetry axis can reorient its direction under thermal activation. On increasing the oxygen-vacancy concentration by annealing the ceria sample at high temperatures or doping ceria with more than 0.4% Y, another two defect complexes (B and C sites) are found. The B site is the complex of the A site plus another oxygen vacancy distant from the indium probe, and the C site is a complex of the A site plus another oxygen vacancy on the opposite side of the indium atom from the indium probe, and the C site is a complex of the A site plus another oxygen vacancy on the opposite side of the indium atom from the first vacancy. When ceria is doped with more than 300ppm Nb, the A site is replaced by an unperturbed site and another defect complex (D site).

Research Organization:
Oregon State Univ., Corvallis, OR (United States)
OSTI ID:
5475054
Resource Relation:
Other Information: Thesis (Ph.D.)
Country of Publication:
United States
Language:
English