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Title: Deposition parameters and film properties of hydrogenated amorphous silicon prepared by high rate dc planar magnetron reactive sputtering

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.333024· OSTI ID:7034916

The sputtering characteristics for film deposition of hydrogenated amorphous silicon (a-Si:H) by dc planar magnetron reactive sputtering have been investigated for a range of H/sub 2//Ar pressures and applied power. These results indicate that the dc planar magnetron utilizing a silicon target is a high performance sputtering source offering a greater potential for the enlargement of solar cell area and a saving in device-processing time than other film deposition techniques currently in use. Film properties have been measured as a function of hydrogen partial pressure p/sub H/. Results are reported of the room temperature dark conductivity and photoconductivity of films versus p/sub H/ for p/sub H/ = 0 --0.5 Pa. Films suitable for photovoltaic applications were prepared possessing dark conductivity < or approx. =10/sup -8/ ..cap omega../sup -1/ cm/sup -1/ and photoconductivity approx.10/sup -4/ ..cap omega../sup -1/ cm/sup -1/. The optical absorption coefficient has been determined as a function of photon energy in the range 0.5--6.0 eV. The optical gap was found to increase with p/sub H/ from 1.7 eV for unhydrogenated material to 2.0 eV for material prepared at p/sub H/ = 3 Pa.

Research Organization:
School of Physics, University of Sydney, N.S.W. 2006, Australia
OSTI ID:
7034916
Journal Information:
J. Appl. Phys.; (United States), Vol. 55:12
Country of Publication:
United States
Language:
English