Intrinsic, n- and p-doped a-Si:H thin films grown by dc magnetron sputtering with doped targets
Intrinsic, n- and p-type a-Si:H films were deposited by dc magnetron sputtering and analyzed with several techniques. The films were synthesized in a reactive Ar-H{sub 2} atmosphere giving H contents in the range of 3--20 at %. The films were sputtered from pure silicon targets and doped silicon targets with 1 at % B or P. Doping by co-sputtering from composite Si/B{sub 4}C targets was also explored. The doping concentrations were 3 x 10{sup 20} {minus} 2 x 10{sup 21} cm{sup {minus}3} for the p-type films and 2.6--2.9 x 10{sup 19} cm{sup {minus}3} for the n-type films. The conductivity was in the range 10{sup {minus}2}--10{sup {minus}4} {Omega}{sup {minus}1} cm{sup {minus}1} for p-doped films and 10{sup {minus}5} {Omega}{sup {minus}1} cm{sup {minus}1} for the best n-doped films. Band gap estimations were obtained from dielectric function data and showed an increase with hydrogen content. A comparison to device quality PECVD-samples was also made.
- Research Organization:
- Linkoeping Univ. (SE)
- OSTI ID:
- 20107882
- Resource Relation:
- Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/09/1999; Other Information: PBD: 1999; Related Information: In: Amorphous and heterogeneous silicon thin films: Fundamentals to devices -- 1999. Materials Research Society symposium proceedings: Volume 557, by Branz, H.M.; Collins, R.W.; Okamoto, Hiroaki; Guha, S.; Schropp, R. [eds.], 908 pages.
- Country of Publication:
- United States
- Language:
- English
Similar Records
New Approaches to Low-Cost Scalable Doping of Interdigitated back Contact Silicon Solar Cells (Final Report)
Development and application of low temperature RF magnetron sputtered ITO thin films for a-Si:H based p/i/n junction solar cells