Infrared photodetectors with SiGe/Si multiple quantum wells

Journal Article · Sun May 01 00:00:00 EDT 1994 · Optical Engineering; (United States)

DOI:https://doi.org/10.1117/12.165809· OSTI ID:7027193

Karunasiri, R P.G.; Park, J S; Wang, K L; Chun, S K ^[1]

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1. Univ. of California, Los Angeles, CA (United States). Dept. of Electrical Engineering

The study of intersubband transitions in both quantum wells and superlattices has rapidly developed to the point where intersubband photodetectors are becoming attractive for a number of applications. This is particularly significant for Si-based heterostructures due to the advantage of monolithic integration with the conventional silicon signal processing electronics, especially for large-area staring FPAs in advanced IR sensor systems. The authors review experimental observations of hole intersubband transitions in SiGe/Si quantum wells. In addition to intersubband transitions in SiGe/Si quantum wells. In addition to intersubband transitions, they also discuss two normal incident absorption processes: intervalence band transition and internal photoemission from 2-D hole gas in the quantum well. Finally, the progress in the application of SiGe/Si multiple quantum well structures for the fabrication of IR detectors operating in both the 2- to 5-[mu]m and 8- to 12-[mu]m ranges is described.

• OSTI ID: 7027193
• Journal Information: Optical Engineering; (United States), Vol. 33:5; ISSN 0091-3286
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
INFRARED RADIATION
RADIATION DETECTION
PHOTODETECTORS
DESIGN
MATERIALS
GERMANIDES
HETEROJUNCTIONS
SEMICONDUCTOR DETECTORS
SILICON
SILICON COMPOUNDS
DETECTION
ELECTROMAGNETIC RADIATION
ELEMENTS
GERMANIUM COMPOUNDS
JUNCTIONS
MEASURING INSTRUMENTS
RADIATION DETECTORS
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
440500* - Thermal Instrumentation- (1990-)