Quantum devices using SiGe/Si heterostructures

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7237670

Karunasiri, R P.G.; Wang, K L ^[1]

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1. Univ. of California, Los Angeles (United States)

Strained-layer Si{sub 1-x}Ge{sub x}/Si heterostructures have created a great deal of interest due to the potential of integration with the conventional silicon very large scale integrated technology. With the current advances in silicon molecular beam epitaxy (Si-MBE) and other low-temperature epitaxial techniques, many Si{sub 1-x}Ge{sub x}/Si heterojunction devices have been realized. For example, among those realized are avalanche photodiodes, modulation-doped field-effect transistors, heterojunction bipolar transistors, and more recently, resonant tunneling structures, hot-carrier transistors, and quantum well metal-oxide-semiconductor field-effect transistors. In this paper several quantum size effects in strained Si{sub 1-x}Ge{sub x} layers and their potential in device applications will be reviewed. Among those to be discussed are resonant tunneling, miniband transport, and intersubband absorption in Si{sub 1-x}Ge{sub x}/Si superlattice structures, optical properties of monolayer Si{sub m}Ge{sub n} superlattices, and observation of large Stark effect associated with interband transition between quantized states in Si{sub 1-x}Ge{sub x}/Si quantum well structures.

• OSTI ID: 7237670
• Report Number(s): CONF-901035-; CODEN: JVTBD
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:4; Conference: 37. national American Vacuum Society symposium, Toronto (Canada), 8-12 Oct 1990; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
SILICON
SILICON COMPOUNDS
CRYSTAL LATTICES
INTEGRATED CIRCUITS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR DEVICES
STARK EFFECT
STRAINS
TUNNELING
CRYSTAL STRUCTURE
ELECTRONIC CIRCUITS
ELEMENTS
EPITAXY
METALS
MICROELECTRONIC CIRCUITS
PHYSICAL PROPERTIES
SEMIMETALS
360606* - Other Materials- Physical Properties- (1992-)