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Title: Performance and analysis of amorphous silicon p-i-n solar cells made by chemical-vapor deposition from disilane

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.338836· OSTI ID:6999014

The photovoltaic performance of amorphous silicon p-i-n solar cells made by chemical-vapor deposition (CVD) from disilane is reported and analyzed. Intrinsic layers were deposited at rates from 0.2 to 50 A/s at temperatures from 380 to 460 /sup 0/C with and without boron doping. Device performance was insensitive to substantial differences in disilane purity. A cell efficiency of 4% was achieved. The primary limitation to higher efficiency was low fill factor (<50%) due to high series resistance (>18 ..cap omega.. cm/sup 2/). Analysis of the series resistance indicated a contact-related resistance of 4--12 ..cap omega.. cm/sup 2/ and a photoconductive resistance composed of intrinsic layer thickness-independent (10 ..cap omega.. cm/sup 2/) and thickness-dependent terms. Analysis of the voltage dependence of the current collection indicated a fill factor of 60% would be expected in the absence of series resistance. The maximum short-circuit current of 12.5 mA/cm/sup 2/ (normalized to 100 mW/cm/sup 2/) resulted with a boron-doped i layer deposited at 440 /sup 0/C at 3.3 A/s. Modeling of the collection efficiency indicated collection widths up to 0.33 ..mu..m for boron-doped and 0.24 ..mu..m for undoped p-i-n devices. In order to achieve high-efficiency cells using CVD from disilane, the limitations imposed by low photoconductivity, a high density of states, and restricted cell design imposed by the high deposition temperatures would have to be overcome.

Research Organization:
Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716
OSTI ID:
6999014
Journal Information:
J. Appl. Phys.; (United States), Vol. 61:1
Country of Publication:
United States
Language:
English