Comparison of conventional /sup 60/Co testing and very low dose-rate irradiation of metal-gate CMOS ICs
Data are presented for one family of Hi-Rel, rad-hard, metal-gate CMOS ICs which show a much greater tolerance to very low dose-rate ionizing radiation than that predicted by conventional-rate (approximately 10/sup 6/ rads(Si)/hr) /sup 60/Co testing. Data obtained using the conventional rate /sup 60/Co irradiations followed by either a 24 hour, high-temperature (100/sup 0/C) or 65 day room temperature anneal are in good agreement with data obtained by exposing similar parts at a very low dose accumulation rate (5000 rads(Si)/day) for 200 consecutive days. The similarity between these findings and the rebound phenomena is described, and the implications of these findings for space and other low dose-rate applications is discussed. A simple test procedure for identifying low dose-rate annealing, or rebound, and its recovery time is proposed. Graphs of thresholds, output drive, and propagation delay versus low dose-rate and conventional-rate dose accumulation are included.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6984753
- Report Number(s):
- SAND-84-1335C; CONF-840712-8; ON: DE84014986
- Resource Relation:
- Conference: 21. IEEE annual conference on nuclear and space radiation effects, Colorado Springs, CO, USA, 22 Jul 1984
- Country of Publication:
- United States
- Language:
- English
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