Using laboratory x-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments
The postirradiation response of CMOS transistors with 30-60 nm gate oxides is investigated as a function of radiation energy, total dose, dose rate, and annealing time. Measurements of threshold voltage, oxide-trapped charge, and interface traps are reported for times ranging from 10 ms to 4 months following LINAC, Co-60, Cs-137, and 10-keV x-ray irradiations. Exposure dose rates vary by 11 orders of magnitude: from 0.05 to 6 x 10/sup 9/ rad(SiO/sub 2/)/s. To within the +- 10 percent uncertainty in the overall dosimetry, no true dose rate effects on MOS device response are observed. Further, for these devices, interface trap and oxide-trapped charge densities are found to be linear with total dose. Based on these results, and subject to future verification, preliminary recommendations are made for lot acceptance testing of hardened CMOS circuits and devices intended for use in space and strategic environments. These include an endorsement of Co-60 exposure and elevated temperature annealing for qualification of devices for use in space environments and a recommendation for the use of x-ray exposures at dose rates greater than -- 2000 rad (SiO/sub 2/)/s, in addition to Co-60 irradiations according to MIL-STD method 1019.3, for strategic applications. These tests are practical to implement, and should provide greatly improved confidence in CMOS performance in space and strategic applications over that obtained with MIL-STD 1019.3 testing.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US)
- OSTI ID:
- 6283997
- Report Number(s):
- CONF-880730-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Vol. 35:6; Conference: 25. annual conference on nuclear and space radiation effects, Portland, OR, USA, 12 Jul 1988
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
ANNEALING
COBALT 60
DOSE RATES
ENVIRONMENTAL EFFECTS
INTERFACES
IRRADIATION
PERFORMANCE
RADIATION DOSES
RADIATION HARDENING
SPACE FLIGHT
TRAPPING
X RADIATION
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT ISOTOPES
DOSES
ELECTROMAGNETIC RADIATION
HARDENING
HEAT TREATMENTS
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
TRANSISTORS
YEARS LIVING RADIOISOTOPES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
654001 - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments