Recrystallization of ion-implanted. cap alpha. -SiC

Journal Article · Thu Jan 01 00:00:00 EST 1987 · J. Mat. Res.; (United States)

OSTI ID:6883611

Bohn, H G; Williams, J M; McHargue, C J; Begun, G M

The annealing behavior of ion-implanted ..cap alpha..-SiC single crystal was determined for samples implanted with 62 keV /sup 14/N to doses of 5.5 x 10/sup 14//cm/sup 2/ and 8.0 x 10/sup 16//cm/sup 2/ and with 260 keV /sup 52/Cr to doses of 1.5 x 10/sup 14//cm/sup 2/ and 1.0 x 10/sup 16//cm/sup 2/. The high-dose samples formed amorphous surface layers to depths of 0.17 ..mu..m (N) and 0.28 ..mu..m (Cr), while for the low doses only highly damaged but not randomized regions were formed. The samples were isochronically annealed up to 1600 /sup 0/C, holding each temperature for 10 min. The remaining damage was analyzed by Rutherford backscattering of 2 MeV He/sup +/, Raman scattering, and electron channeling. About 15% of the width of the amorphous layers regrew epitaxially from the underlying undamaged material up to 1500 /sup 0/C, above which the damage annealed rapidly in a narrow temperature interval. The damage in the crystalline samples annealed linearly with temperature and was unmeasurable above 1000 /sup 0/C.

• Research Organization: Institut fuer Festkoerperforschung, Kernforschungsanlage Juelich, Postfach 1913, D-5170 Juelich, Federal Republic of Germany
• OSTI ID: 6883611
• Journal Information: J. Mat. Res.; (United States), Vol. 2:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON CARBIDES
ANNEALING
ION IMPLANTATION
RECRYSTALLIZATION
CHROMIUM IONS
DAMAGE
KEV RANGE 10-100
MONOCRYSTALS
NITROGEN IONS
RUTHERFORD SCATTERING
CARBIDES
CARBON COMPOUNDS
CHARGED PARTICLES
CRYSTALS
ELASTIC SCATTERING
ENERGY RANGE
HEAT TREATMENTS
IONS
KEV RANGE
SCATTERING
SILICON COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication