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Title: Regrowth behavior of three different damage structures in P/sup +/ implanted and subsequently laser annealed Si

Conference ·
OSTI ID:5849161

The regrowth behavior of three different damage structures, namely, a buried amorphous layer, a continuous amorphous layer extending from the surface of the specimen and a buried layer of clusters in P/sup +/ implanted (111) Si were studied. These structures were obtained by implanting P/sup +/ at 120 keV to doses of 5 x 10/sup 14/, 10/sup 15/ and 5 x 10/sup 15//cm/sup 2/ at implantation temperatures RT, 150/sup 0/ and 350/sup 0/, respectively. A Q-switched ruby laser with a wavelength of 0.695 nm and at an energy either 0.7J/cm/sup 2/ or 1.5J/cm/sup 2/ was used for laser annealing. TEM was used to examine the damage in a 90/sup 0/ cross-sectional view. At 0.7J/cm/sup 2/, two-thirds of the continuous amorphous layer regrew to give a polycrystalline layer. The buried amorphous layer regrew leaving dislocation loops and clusters and the buried layer of clusters remained unaffected. However, at 1.5J/cm/sup 2/, dislocations and stacking faults extended from the surface for all the structures and were in direct contact with the deeper lying damage containing clusters. The density of dislocations, stacking faults and deeper lying clusters progressively increased with the dose of the implanted phosphorus.

Research Organization:
California Univ., Berkeley (USA). Lawrence Berkeley Lab.; Oxford Univ. (UK). Dept. of Metallurgy
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
5849161
Report Number(s):
LBL-10008; CONF-791017-14
Resource Relation:
Conference: 7. international conference on chemical vapor deposition, Los Angeles, CA, USA, 14 Oct 1979
Country of Publication:
United States
Language:
English