Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells

Journal Article · Mon Nov 01 00:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.125181· OSTI ID:687980

Chow, W W; Jones, E D; Modine, N A; Allerman, A A; Kurtz, S R ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 (United States)

The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GaInNAs/GaAs laser structures. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 687980
• Journal Information: Applied Physics Letters, Vol. 75, Issue 19; Other Information: PBD: Nov 1999
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
GALLIUM ARSENIDES
INDIUM NITRIDES
SEMICONDUCTOR LASERS
GAIN
STRAINS
CARRIER DENSITY
CURRENT DENSITY