Comparison of steady-state and transient characteristics of lattice-matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum-well lasers

Journal Article · Fri May 01 00:00:00 EDT 1992 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.135265· OSTI ID:5096122

Lam, Y; Singh, J ^[1]; Loehr, J P ^[2]

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1. Center for High-Frequency Microelectronics, Solid State Electronics Lab., Dept. of Electrical Engineering and Computer Science, Univ. of Michigan, Ann Arbor, MI (US)
2. Electronics Technology Lab., Wright Patterson Air Force Base, Dayton, OH (US)

This paper reports on numerical techniques to study the output spectra and to solve the multimode coupled rate equations including TE and TM propagations for In{sub x}Ga{sub 1{minus}x}As-Al{sub 0.3}Ga{sub 0.7}As and In{sub 0.53+x}Ga{sub 0.47{minus}x}As-Al{sub 0.48}In{sub 0.52}As quantum well lasers. Optical properties are calculated from a 4 {times} 4 k {center dot} p bandstructure and strain effects are included with the deformation potential theory. The authors find that an introduction of 1.4% compressive strain to the quantum well results in roughly 3-4 times improvement in the intrinsic static characteristics in terms of lower threshold current, greater mode suppression, and lower nonlashing photon population in the laser cavity. The authors also identify the role of strain on the large signal temporal response. If the laser is switched from the off state to a given photon density in the lasing mode, then the strained system exhibits a faster intrinsic time response. However, if the lasers are switched to equal total photon density, then the strained system has a slower time response. The authors also include calculated CHSH Auger rates in our model and find that the main effect of Auger recombination is to greatly increase the threshold current and to shorten the response time to large signal switching.

• OSTI ID: 5096122
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Vol. 28:5; ISSN 0018-9197
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
LASER MATERIALS
OPTICAL PROPERTIES
SEMICONDUCTOR LASERS
ENERGY SPECTRA
ALUMINIUM ARSENIDES
AUGER EFFECT
CALCULATION METHODS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASER CAVITIES
LATTICE PARAMETERS
MODE CONTROL
NUMERICAL SOLUTION
QUANTUM EFFICIENCY
STEADY-STATE CONDITIONS
THRESHOLD CURRENT
TRANSIENTS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SPECTRA
426002* - Engineering- Lasers & Masers- (1990-)
661100 - Classical & Quantum Mechanics- (1992-)