1. 5. mu. m InGaAsP/InP buried rib waveguide lasers
InGaAsP/InP double heterostructure lasers with buried rib waveguide structure in which p-quaternary rib waveguide layers surrounded by n-InP are formed adjacent to the active layers, are proposed for the 1.5--1.6 ..mu..m wavelength range and have been successfully fabricated by two-step liquid phase epitaxial methods combined with a controlled mesa etching technique. In this structure, the rib waveguide layer can provide carrier confinement as well as lateral optical confinement. The low threshold current of 50 mA was obtained with the external differential quantum efficiencies of about 42% and 36% under pulsed and cw operation, respectively. Stable fundamental transverse mode operation was achieved up to three times the threshold current, and single longitudinal mode cw operation was also observed up to 1.5 times threshold current.
- Research Organization:
- Opto-Electronics Research Laboratories, Nippon Electric Company, Ltd., Miyamae-ku, Kawasaki, Japan
- OSTI ID:
- 6798486
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 54:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
WAVEGUIDES
CHARGE CARRIERS
CONFIGURATION
CONFINEMENT
EPITAXY
ETCHING
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INFRARED RADIATION
LIQUIDS
OPTICAL PROPERTIES
OSCILLATION MODES
PULSES
QUANTUM EFFICIENCY
THRESHOLD CURRENT
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
FLUIDS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)