Successful utilization of CH{sub 4}/H{sub 2} RIE for the fabrication of 1.3 {micro}m InGaAsP/InP integrated laser with butt-coupled passive waveguides
- Electronics and Telecommunications Research Inst., Taejon (Korea, Republic of). Optoelectronics Div.
- Chonnam National Univ., Kwangju (Korea, Republic of). Dept. of Metallurgical Engineering
The authors obtained uniform and high performance for 1.3 {micro}m InGaAsP/InP buried heterostructure (BH) integrated laser with butt-coupled waveguides using reactive ion etching (RIE) for mesa definition and low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) for waveguide and blocking layer regrowth. Measured average coupling efficiency between active layer and passive waveguide layer was over 91% per facet across a quarter of 2-inch InP wafer. And the average threshold current and slope efficiency were 13 mA and 0.26 mW/mA of the 700 {micro}m long integrated laser, respectively. These uniform and high performance was attributed to the uniform etching characteristics of RIE and a slight chemical etching using HBr-based solution for relief of RIE damage.
- OSTI ID:
- 536186
- Report Number(s):
- CONF-960498-; ISBN 0-7803-3283-0; TRN: IM9745%%25
- Resource Relation:
- Conference: 8. international conference on indium phosphide and related materials, Schwaebisch-Gmuend (Germany), 21-25 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Indium phosphide and related materials 1996: Proceedings; PB: 799 p.
- Country of Publication:
- United States
- Language:
- English
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