Post-gate plasma and sputter process effects on the radiation hardness of metal gate CMOS integrated circuits
With the decreasing dimensions of todays IC's, more attention is being directed towards plasma processing for process simplification and improved control of dimensional tolerances. The desire for high reliability automated assembly techniques has led to the development of the gold bump technology for tape automated bonding. Furthermore, the development of the beam-lead technology continues. All these developments lead to increased use of plasma and sputter processes; therefore, the impact of these processes on radiation hardness must be evaluated. The devices employed in this investigation are CMOS 4007 inverters. They were processed according to the optimized baseline process sequence through Al sinter except that no gate oxide anneal was used. The gate oxide thickness was 700 A. Substrate and p-well resistivities were chosen to give preirradiation p-channel and n-channel thresholds of -2.0 and +3.0 volts respectively. The ..gamma..-induced threshold voltage shifts are plotted as a function of the irradiation dose. (WHK)
- Research Organization:
- Sandia Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- EY-76-C-04-0789
- OSTI ID:
- 6696996
- Report Number(s):
- SAND-78-0575C; CONF-780707-1; TRN: 78-018195
- Resource Relation:
- Conference: IEEE radiation effects conference, Albuquerque, NM, USA, 18 Jul 1978
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
INTEGRATED CIRCUITS
FABRICATION
RADIATION HARDENING
MOS TRANSISTORS
BONDING
GAMMA RADIATION
INVERTERS
PHYSICAL RADIATION EFFECTS
PLASMA ARC SPRAYING
RADIOSENSITIVITY
SPUTTERING
DEPOSITION
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
EQUIPMENT
HARDENING
IONIZING RADIATIONS
JOINING
MICROELECTRONIC CIRCUITS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SPRAY COATING
SURFACE COATING
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems