Thirty megarad CMOS gate array for spacecraft applications

Journal Article · Sat Dec 01 00:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333512· OSTI ID:5865631

Voss, H D; Hardage, C; Jones, F C; Roffelsen, L

The recent development, testing, qualification and integration for spacecraft applications of a general purpose, 30 Megarad-hard, CMOS logic gate array having 3000 transistors is reported. Fabricated on the National Semiconductor, Inc. class S radation-hard line, the gate array operates at >3 MHz (10V) after 10/sup 7/ rad(Si) total dose from a Co/sup 60/ source. The threshold voltage change is 0.2 volts (0.5 volts) for the n-channel (p-channel) devices under 10V bias conditions. The rad-hard process of the CDI gate array family is mask compatible with the conventional process for cost effective semicustom design. The rad-hard array is presently operating in-orbit on the AMPTE satellite and is planned for instruments to be flown on the CRRES and UARS satellites.

• Research Organization: Lockheed Palo Alto Research Laboratory, Palo Alto, CA 94304
• OSTI ID: 5865631
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-31:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
MOS TRANSISTORS
DESIGN
PERFORMANCE TESTING
SATELLITES
COBALT 60
COST
DOSE RATES
ELECTRIC POTENTIAL
GATING CIRCUITS
MHZ RANGE
RADIATION HARDENING
SPACECRAFT POWER SUPPLIES
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT ISOTOPES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FREQUENCY RANGE
HARDENING
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
PHYSICAL RADIATION EFFECTS
POWER SUPPLIES
RADIATION EFFECTS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS
YEARS LIVING RADIOISOTOPES
420800* - Engineering- Electronic Circuits & Devices- (-1989)