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Title: Thin films of InP for photovoltaic energy conversion. Third quarterly technical progress report, December 29, 1979-March 28, 1980

Technical Report ·
DOI:https://doi.org/10.2172/6661122· OSTI ID:6661122

A research study is being conducted for the purpose of developing a low-cost high-efficiency thin-film InP heterojunction solar cell based on InP films grown by the metalorganic chemical vapor deposition (MO-CVD) process on suitable substrates. Heterostructure devices of CdS/InP (and possibly indium tin oxide/InP) are to be prepared at Stanford University under subcontract, using the MO-CVD InP films grown at Rockwell. The work of the third quarter of the program is summarized. Experiments continued on evaluation of GaP as an intermediate layer material for subsequent growth of InP films on various substrate materials, and Cd (obtained from dimethylcadmium) was evaluated as a p-type dopant (an alternative to Zn obtained from diethylzinc) for InP films made by the MO-CVD process. A preliminary x-ray diffraction analysis was conducted of the crystallographic structure of the vacuum-deposited CdS films prepared at Stanford as part of the process of fabricating CdS/InP heterojunction solar cells. A group of CdS/InP heterostructure cells involving vacuum-deposited CdS and p-type epitaxial InP films grown by MO-CVD was prepared and evaluated. High J/sub 0/ values and low fill factors were observed in all of the cells, resulting in AM1.5 efficiencies in the 2 to 5 percent range. (WHK)

Research Organization:
Rockwell International Corp., Anaheim, CA (USA). Electronic Devices Div.
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-79ET23004
OSTI ID:
6661122
Report Number(s):
COO-3004-3
Country of Publication:
United States
Language:
English