Thin films of InP for photovoltaic energy conversion. First quarterly technical progress report, July 5, 1979-September 28, 1979

Technical Report · Thu Nov 01 00:00:00 EST 1979

DOI:https://doi.org/10.2172/5322122· OSTI ID:5322122

Manasevit, H. M.; Ruth, R. P.; Moudy, L. A.; Yang, J. J.J.; Johnson, R. E.

A research study is in progress to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable low-cost substrates. Heterostructure devices of CdS/InP and indium tin oxides (ITO)/InP are to be prepared by Stanford University under subcontract, using the InP films grown by MO-CVD. The first quarter's work is summarized. An existing reactor system was modified and upgraded, with provision for growth of GaAs intermediate layers and p-type doping capability using a premixed metalorganic Zn compound source, as well as a dilution system common to the dopants and the Group III and Group V reactants. The all-fused-quartz deposition chamber was redesigned to permit use of larger susceptors and to facilitate assembly, disassembly, and cleaning. Initial attempts to prepare p-type epitaxial InP films on single-crystal InP substrates met with only limited success until a new source of diethylzinc (DEZn) was obtained and installed on the system, after which active Zn concentrations (i.e., measured hole concentrations) in the 10/sup 17/ cm/sup -3/ range were produced in epitaxial films on (100), 111A), and (111B) InP substrates in the deposition temperature range 715 to 730/sup 0/C. The films have been characterized by x-ray and electron diffraction analyses, examination in the scanning electron microscope, and determination of transport properties by Hall-effect measurements using the van der Pauw method. Results of these investigations are reviewed.

• Research Organization: Rockwell International Corp., Anaheim, CA (USA). Electronic Devices Div.
• DOE Contract Number: AC02-79ET23004
• OSTI ID: 5322122
• Report Number(s): DOE/ET/23004-T1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
INDIUM PHOSPHIDE SOLAR CELLS
FABRICATION
INDIUM PHOSPHIDES
CHEMICAL VAPOR DEPOSITION
CADMIUM SULFIDES
CHEMICAL REACTORS
ELECTRON DIFFRACTION
FILMS
INDIUM OXIDES
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
TIN OXIDES
X-RAY DIFFRACTION
CADMIUM COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
DIRECT ENERGY CONVERTERS
ELECTRON MICROSCOPY
EQUIPMENT
INDIUM COMPOUNDS
INORGANIC PHOSPHORS
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORS
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SCATTERING
SOLAR CELLS
SOLAR EQUIPMENT
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TIN COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture