X-ray diffraction analysis of SiGe/Si heterostructures on sapphire substrates

Journal Article · Sat Aug 01 00:00:00 EDT 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.122039· OSTI ID:639821

Mooney, P M; Ott, J A; Chu, J O; Jordan-Sweet, J L ^[1]

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1. IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)

Si/Si{sub 1{minus}x}Ge{sub x} heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultrahigh vacuum chemical vapor deposition for application as {ital p}-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate their thermal stability. Outdiffusion of Ge from the strained Si{sub 1{minus}x}Ge{sub x} quantum well was observed after annealing at 850thinsp{degree}C. The amount of outdiffusion was comparable to that observed in Si{sub 1{minus}x}Ge{sub x} structures on bulk Si wafers. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 639821
• Journal Information: Applied Physics Letters, Vol. 73, Issue 7; Other Information: PBD: Aug 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
SEMICONDUCTOR MATERIALS
FIELD EFFECT TRANSISTORS
GERMANIUM SILICIDES
SILICON
HETEROJUNCTIONS
X-RAY DIFFRACTION
SAPPHIRE
CHEMICAL VAPOR DEPOSITION
DIFFUSION
ANNEALING
CRYSTAL DEFECTS