Refractive index and hygroscopic stability of Al[sub x]Ga[sub 1[minus]x]As native oxides
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
- Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)
We present prism coupling measurements on Al[sub x]Ga[sub 1[minus]x]As native oxides showing the dependence of refractive index on composition (0.3[le]x[le]0.97), oxidation temperature (400[le]T[le]500), and carrier gas purity. Index values range from n=1.490 (x=0.9, 400 [degree]C) to 1.707 (x=0.3, 500 [degree]C). The oxides are shown to adsorb moisture, increasing their index by up to 0.10 (7[percent]). Native oxides of Al[sub x]Ga[sub 1[minus]x]As (x[le]0.5) have index values up to 0.27 higher and are less hygroscopic when prepared with a small amount of O[sub 2] in the N[sub 2]+H[sub 2]O process gas. The higher index values are attributed to a transition from a hydroxide to a denser (Al[sub x]Ga[sub 1[minus]x])[sub 2]O[sub 3] oxide phase. [copyright] [ital 1999 American Institute of Physics.]
- OSTI ID:
- 6330896
- Journal Information:
- Applied Physics Letters, Vol. 75:8; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ADSORPTION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
GALLIUM ARSENIDES
HETEROJUNCTIONS
MASS SPECTRA
MOISTURE
OXIDATION
REFRACTIVE INDEX
STOICHIOMETRY
THIN FILMS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
DEPOSITION
FILMS
GALLIUM COMPOUNDS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SORPTION
SPECTRA
SURFACE COATING
360606* - Other Materials- Physical Properties- (1992-)