Grain boundary recombination: Theory and experiment in silicon

Journal Article · Mon Jun 01 00:00:00 EDT 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.329202· OSTI ID:6325234

Seager, C H

Calculations have been made of the barrier heights and recombination velocities at semiconductor grain boundaries subject to uniform illumination with above-band-gap light. A detailed balance approach has been coupled with a solution of the current continuity equation to yield a full solution of the problem subject to the approximation that majority carrier currents can be properly described by thermionic emission expressions. Silicon bicrystal data are presented and shown to be in good agreement with the predictions of the theory.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: DE-AC04-76-DP00789
• OSTI ID: 6325234
• Journal Information: J. Appl. Phys.; (United States), Vol. 52:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
GRAIN BOUNDARIES
RECOMBINATION
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
CONTINUITY EQUATIONS
IRRADIATION
MATHEMATICAL MODELS
POTENTIALS
SEMICONDUCTOR MATERIALS
THEORETICAL DATA
THERMIONIC EMISSION
CRYSTAL STRUCTURE
DATA
DIFFERENTIAL EQUATIONS
ELEMENTS
EMISSION
EQUATIONS
INFORMATION
MATERIALS
MICROSTRUCTURE
NUMERICAL DATA
PARTIAL DIFFERENTIAL EQUATIONS
SEMIMETALS
360603* - Materials- Properties